Numerical analysis of high frequency GaAs FET transistor using alternating direction implicit (ADI) finite-difference time-domain method; Distributed modeling approach

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ژورنال

عنوان ژورنال: AEU - International Journal of Electronics and Communications

سال: 2021

ISSN: 1434-8411

DOI: 10.1016/j.aeue.2020.153514